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Field-effect transistor replaces bulky transformer in analog-gate circuit

Published
Sep 1, 1965.
Physical Description
1 electronic document
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits. It provides better system isolation than a transformer, while size and weight are appreciably reduced.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19650000282.
Accession ID: 65B10284.
GSC-351.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 16211577