Actions for Circular electrode geometry metal-semiconductor-metal photodetectors

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Circular electrode geometry metal-semiconductor-metal photodetectors

Author
Towe, Elias
Published
Sep 19, 1995.
Physical Description
1 electronic document
Additional Creators
Bishop, William L., Wang, Liang-Guo, and Mcadoo, James A.
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19960001604.
Accession ID: 96N11612.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 17030133