Heavily Doped PBSE with High Thermoelectric Performance
- Author
- Pei, Yanzhong
- Published
- September 29, 2015.
- Physical Description
- 1 electronic document
- Additional Creators
- Wang, Heng and Snyder, G. Jeffrey
Online Version
- hdl.handle.net , Connect to this object online.
- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT (is) greater than 1.3 was observed when n(sub H) approximately 1.0 X 10(exp 20) cm(exp -3). The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 20150018789.
- Terms of Use and Reproduction
- No Copyright.
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