High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors
- Author
- Chang, Clarence T.
- Published
- May 13, 2014.
- Physical Description
- 1 electronic document
- Additional Creators
- Okojie, Robert S., Savrun, Ender, and Meredith, Roger D.
Online Version
- hdl.handle.net , Connect to this object online.
- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 20140017686.
GRC-E-DAA-TN14380.
International Conference on High Temperature Electronics (HiTEC 2014); 13-15 May 2014; Albuquerque, NM; United States. - Terms of Use and Reproduction
- Copyright, Distribution as joint owner in the copyright.
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