Actions for Radiation Effects of Commercial Resistive Random Access Memories

Email RIS file
Bookmark
Report an Issue

Radiation Effects of Commercial Resistive Random Access Memories

Author
Phan, Anthony
Published
June 17, 2014.
Physical Description
1 electronic document
Additional Creators
Khachatrian, Ani, LaBel, Kenneth, Buchner, Stephen, Kim, Hak, Wilcox, Edward, Figueiredo, Marco, Roche, Nicolas, Berg, Melanie, and Chen, Dakai
Online Version

Availability

I Want It
I Want It

Finding items...

Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 20150000206.
GSFC-E-DAA-TN15138.
2014-561-NEPP.
Annual NASA Electronic Parts and Packaging (NEPP) Program Electronics Technology Workshop; 17-19 Jun. 2014; Greenbelt, MD; United States.
Terms of Use and Reproduction
Copyright, Distribution as joint owner in the copyright.
View MARC record | catkey: 17533130