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Characterization and modeling of ultra-submicrometer gate-length modulation-doped field-effect transistors on InP substrates

Author
Sung, Roberto
Published
[Place of publication not identified] : [publisher not identified], 1994.
Physical Description
133 leaves

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Related Titles
Ultra-submicrometer gate-length modulation-doped field-effect transistors on InP substrates
Dissertation Note
Ph.D. Pennsylvania State University.
Reproduction Note
Microfilm (positive). 1 reel 35mm., (University Microfilms 95-18881).
View MARC record | catkey: 1910685