Accumulation of charge carriers in p-i-n diodes at superhigh injection levels

Author: Dadamirzaev, G.
Published: [Place of publication not identified] : [publisher not identified], 1970.
Physical Description: pages 45-48
Additional Creators: American Institute of Aeronautics and Astronautics. Technical Information Service

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Language Note

In Russian.

Subject(s)

Aeronautics

Collection

IAA papers.

Note

Reproduced from: Akademiia Nauk Uzbekskoi Ssr, Izvestiia, Seriia Fiziko-Matematicheskikh Nauk
Abstracted in International Aerospace Abstracts.
A70-32908.

Reproduction Note

Microform. New York : American Institute of Aeronautics and Astronautics, Technical Information Service, [19--?]

View MARC record | catkey: 19144470

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Accumulation of charge carriers in p-i-n diodes at superhigh injection levels

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