Application of the field effect to measure the surface recombination rate of oxidized silicon

Author: Brejwo, W.
Published: [Place of publication not identified] : [publisher not identified], 1970.
Physical Description: pages 155-160
Additional Creators: American Institute of Aeronautics and Astronautics. Technical Information Service

Browse Nearby on Shelf

Finding items...

Language Note

In Polish.

Subject(s)

Collection

IAA papers.

Note

Reproduced from: Elektronika
Abstracted in International Aerospace Abstracts.
A70-43443.

Reproduction Note

Microform. New York : American Institute of Aeronautics and Astronautics, Technical Information Service, [19--?]

View MARC record | catkey: 19149360

Actions for Application of the field effect to measure the surface recombination rate of oxidized silicon