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Actions for Studies of gate oxides thermally grown at high pressure on silicon surfaces
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Studies of gate oxides thermally grown at high pressure on silicon surfaces
Author
Williams Ryan D.
Published
[Place of publication not identified] : [publisher not identified], 2000.
Physical Description
32 leaves : color illustrations
Additional Creators
Rużyłło, Jerzy
and
Schreyer Honors College
Full Text available online
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Dissertation Note
B.S. Pennsylvania State University 2000.
Note
Thesis supervisor: Jerzy Ruzyllo.
Reproduction Note
Library holds archival microfiche negative and service copy (PSU Management Services, 2000)
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| catkey: 2048516