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Carbon-containing layers on silicon : growth, properties and applications / H. J. Osten

Author
Osten, H. J.
Published
Uetikon, Switzerland ; Enfield, N.H. : Trans Tech Publications, [1999]
Copyright Date
©1999
Physical Description
77 pages : illustrations ; 25 cm.

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Contents
GROWTH OF EPITAXIAL Si1-yCy AND Si1-x-yGexCy: The concept of surface solubility -- Substitutional versus interstitial C incorporation -- Segregation of carbon-containing complexes -- MECHANICAL AND STRUCTURAL PROPERTIES: Strain manipulation -- Thermal stability -- Strain-compensated ternary alloys -- ELECTRICAL PROPERTIES OF CCONTAINING ALLOYS ON Si(00l): Band gap changes and band offsets -- Charge transport -- HIGHLY CONCENTRATED PSEUDOMORPHIC Si1-yCy LAYERS: Model considerations -- Experimental verification -- Formation of carbon-rich surface in silicon -- APPLICATION OF SiGe:C IN HETEROJUNCTION BIPOLAR TRANSITORS: Suppressed dopant diffusion in carbon-rich silicon -- Advanced heterojunction bipolar transistors with SiGe:C.
Subject(s)
ISBN
0878498346
Bibliography Note
Includes bibliographical references (pages 72-77).
View MARC record | catkey: 2116191