LIGHT SENSITIVE SEMICONDUCTOR CAPACITORS (PHOTOVARICAPS) by L. S. Berman -- TRANSIENT PROCESSES IN A NONLINEAR CIRCUIT BASED ON DISTRIBUTED DIFFUSION CAPACITANCE by V. A. Lossovskiy -- DETERMINING THE BASE RESISTANCE OF DRIFT TRANSISTORS by M. V. Matosov -- HARMONIC ANALYSIS OF THE VOLTAGE ACROSS A VARICAP WHEN THE CHARGE VARIES SINUSOIDALLY by G. N. Tereshina -- THE NUMBER OF STABLE STATES OF A TUNNEL-DIODE NETWORK by Yu. T. Butyl'skiy -- CALCULATING THE QUALITY MAXIMUM FOR COMPUTER COMPONENTS by V. I. Lebedev -- APPROXIMATING THE VOLT-AMPERE CHARACTERISTICS OF p-n-p-n SEMICONDUCTOR DEVICES by V. G. Mashlykin -- EQUIVALENT CIRCUIT PARAMETERS OF DRIFT TRANSISTORS AS A FUNCTION OF IMPURITY CONCENTRATION IN THE BASE by V. M. Bogachev -- SIMPLIFIED ANALYSIS OF A PLANAR TRANSISTOR WITH DISTRIBUTED PARAMETERS FOR HIGH-FREQUENCY OSCILLATION MODES by V. M. Bogachev -- TRANSIENT PROCESSES INVOLVED IN THYRISTOR SWITCHING by V. A. Gorokhov -- RESIDUAL VOLTAGE IN SEMICONDUCTOR DEVICES WITH DIFFUSION n-p JUNCTIONS by V. A. Gorokhov, G. V. Koshelyayev, G. P. Tulunkin.
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