Antimony diffusion in CdTe [electronic resource].
- Washington, D.C. : United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy, 2017. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 870-873 : digital, PDF file
- Additional Creators:
- National Renewable Energy Laboratory (U.S.), United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. Lastly, the theory and experimental results create new understanding of group V defect kinetics in CdTe.
- Published through SciTech Connect., 02/08/2017., "nrel/ja--5k00-65802", IEEE Journal of Photovoltaics 7 3 ISSN 2156-3381 AM, and Eric Colegrove; Steven P. Harvey; Ji -Hui Yang; James M. Burst; Joel N. Duenow; David S. Albin; Su -Huai Wei; Wyatt K. Metzger.
- Funding Information:
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