N-doping of organic semiconductors by bis-metallosandwich compounds [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Additional Creators:
- Georgia Institute of Technology
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
- Published through SciTech Connect.
Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang; Mohapatra, Swagat; Guo, Song.
- Funding Information:
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