N-doping of organic semiconductors by bis-metallosandwich compounds [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Additional Creators:
- Georgia Institute of Technology, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
- Report Numbers:
- E 1.99:9,231,219
9,231,219 - Subject(s):
- Note:
- Published through SciTech Connect.
01/05/2016.
"9,231,219"
"14/126,319"
Barlow, Stephen; Qi, Yabing; Kahn, Antoine; Marder, Seth; Kim, Sang; Mohapatra, Swagat; Guo, Song. - Funding Information:
- FG02-07ER46467
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