Shock compression of [001] single crystal silicon [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2016. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 335-341 : digital, PDF file
- Additional Creators:
- Lawrence Livermore National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Access Online:
- www.osti.gov
- Summary:
- Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent with dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Furthermore, application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.
- Subject(s):
- Note:
- Published through SciTech Connect., 03/14/2016., "llnl-jrnl--696497", European Physical Journal. Special Topics 225 2 ISSN 1951-6355 AM, and S. Zhao; B. Remington; E. N. Hahn; B. Kad; E. M. Bringa; M. A. Meyers.
- Funding Information:
- AC52-07NA27344
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