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Time constant of defect relaxation in ion-irradiated 3<i>C</i>-SiC [electronic resource].

Published
Washington, D.C. : United States. Office of the Assistant Secretary for Nuclear Energy, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 202,102 : digital, PDF file
Additional Creators
Lawrence Livermore National Laboratory, United States. Office of the Assistant Secretary for Nuclear Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here in this work, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ~3 ms (for second order kinetics) and a dynamic annealing efficiency of ~40% for defects in both Si and C sublattices. Finally, this demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.
Report Numbers
E 1.99:llnl-jrnl--668477
llnl-jrnl--668477
Subject(s)
Note
Published through SciTech Connect.
05/19/2015.
"llnl-jrnl--668477"
Applied Physics Letters 106 20 ISSN 0003-6951 AM
J. B. Wallace; L. B. Bayu Aji; L. Shao; S. O. Kucheyev.
Funding Information
AC52-07NA27344
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