Actions for Ferroelastic switching in a layered-perovskite thin film [electronic resource].
Ferroelastic switching in a layered-perovskite thin film [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description
- Article numbers 10,636 : digital, PDF file
- Additional Creators
- United States. Department of Energy. Office of Basic Energy Sciences and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Here, a controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
- Report Numbers
- E 1.99:1253567
- Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
02/03/2016.
"ncomms10636"
Nature Communications 7 ISSN 2041-1723 AM
Chuanshou Wang; Xiaoxing Ke; Jianjun Wang; Renrong Liang; Zhenlin Luo; Yu Tian; Di Yi; Qintong Zhang; Jing Wang; Xiu -Feng Han; Gustaaf Van Tendeloo; Long -Qing Chen; Ce -Wen Nan; Ramamoorthy Ramesh; Jinxing Zhang.
Pennsylvania State Univ., University Park, PA (United States) - Funding Information
- FG02-07ER46417
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