Actions for Injection deep level transient spectroscopy [electronic resource] : An improved method for measuring capture rates of hot carriers in semiconductors

Email RIS file
Bookmark
Report an Issue

Injection deep level transient spectroscopy [electronic resource] : An improved method for measuring capture rates of hot carriers in semiconductors

Published
Washington, D.C. : United States. National Nuclear Security Administration, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 015,703 : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online

Availability

I Want It
I Want It

Finding items...

Restrictions on Access
Free-to-read Unrestricted online access
Summary
In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range of capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.
Report Numbers
E 1.99:sand--2015-5982j
sand--2015-5982j
Subject(s)
Other Subject(s)
Note
Published through SciTech Connect.
07/02/2015.
"sand--2015-5982j"
"618345"
Journal of Applied Physics 118 1 ISSN 0021-8979; JAPIAU AM
R. M. Fleming; C. H. Seager; D. V. Lang; J. M. Campbell.
Funding Information
AC04-94AL85000
View MARC record | catkey: 23759348