Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2014.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: Article numbers 131,109 : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. Department of Energy. Office of Basic Energy Sciences, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Here, we utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ0 ~ 6 ×10-3, where d is the film thickness and λ0 is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.

Report Numbers:

E 1.99:sand2014--17532j
sand2014--17532j

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Published through SciTech Connect.
09/29/2014.
"sand2014--17532j"
"537394"
Applied Physics Letters 105 13 ISSN 0003-6951 FT
Young Chul Jun; Ting S. Luk; A. Robert Ellis; John F. Klem; Igal Brener.
Inha Univ., Incheon (Korea, Republic of)
National Research Foundation of Korea (NRF)

Funding Information:

AC04-94AL85000
INHA-47839
2008-0061893

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