X-RAY PHOTOEMISSION ANALYSIS OF CHEMICALLY TREATED GaTe SEMICONDUCTOR SURFACES FOR RADIATION DETECTOR APPLICATIONS [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2009.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: PDF-file: 26 pages; size: 0.9 Mbytes
Additional Creators:: Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Abstract not provided

Report Numbers:

E 1.99:llnl-jrnl-414165
llnl-jrnl-414165

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Note:

Published through SciTech Connect.
05/11/2009.
"llnl-jrnl-414165"
Journal of Applied Physics, vol. 106, no. 2, July 15, 2009, pp. 023717 FT
Nelson, A J; Conway, A M; Sturm, B W; Behymer, E M; Reinhardt, C E; Nikolic, R J; Payne, S A; Pabst, G; Mandal, K C.

Funding Information:

DE-AC52-07NA27344

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