Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy. Office of Science, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: Article numbers 085,501 : digital, PDF file
Additional Creators:: Oak Ridge National Laboratory, United States. Department of Energy. Office of Science, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion (CTE) mismatch, elastic mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50{degree sign}C/85% RH. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

Report Numbers:

E 1.99:1265679

Subject(s):

Engineering

Note:

Published through SciTech Connect.
08/28/2015.
"KC0403040"
"ERKCZ01"
Journal of Applied Physics 118 8 ISSN 0021-8979 AM
Anuradha Bulusu; Ankit K. Singh; Cheng-Yin Wang; Amir Dindar; Canek Fuentes-Hernandez; Hyungchul Kim; David A. Cullen; Bernard Kippelen; Samuel Graham.

Funding Information:

AC05-00OR22725

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