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AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Energy Efficiency and Renewable Energy, 2018.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 47-55 : digital, PDF file
Additional Creators
National Renewable Energy Laboratory (U.S.), United States. Department of Energy. Office of Energy Efficiency and Renewable Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
A novel method is developed to realize a III-V/Si dual-junction photovoltaic cell by combining epitaxial lift-off (ELO) and print-transfer-assisted bonding methods. The adoption of ELO enables III-V wafers to be recycled and reused, which can further lower the cost of III-V/Si photovoltaic panels. For demonstration, high crystal quality, micrometer-thick, GaAs/AlGaAs/GaAs films are lifted off, transferred, and directly bonded onto Si wafer without the use of any adhesive or bonding agents. The bonding interface is optically transparent and conductive both thermally and electrically. Prototype AlGaAs/Si dual-junction tandem solar cells have been fabricated and exhibit decent performance.
Report Numbers
E 1.99:nrel/ja--5j00-71243
nrel/ja--5j00-71243
Subject(s)
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Note
Published through SciTech Connect.
01/04/2018.
"nrel/ja--5j00-71243"
Energy Science & Engineering 6 1 ISSN 2050-0505 AM
Kanglin Xiong; Hongyi Mi; Tzu-Hsuan Chang; Dong Liu; Zhenyang Xia; Meng-Yin Wu; Xin Yin; Shaoqin Gong; Weidong Zhou; Jae Cheol Shin; Xiuling Li; Michael Arnold; Xudong Wang; Hao-Chih Yuan; Zhenqiang Ma.
Funding Information
AC36-08GO28308
View MARC record | catkey: 23766995