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Carrier tunneling in models of irradiated heterojunction bipolar transistors [electronic resource].

Published
Washington, D.C. : United States. National Nuclear Security Administration, 2014.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
7 pages : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
As part of Sandia's program to simulate the effect of displacement damage on operation of heterojunction bipolar transistors (HBTs), we are examining the formulation in 1-D of band-to-band (bb) and band-to-trap (b-t) carrier tunneling.
Report Numbers
E 1.99:sand--2014-17272r
sand--2014-17272r
Subject(s)
Note
Published through SciTech Connect.
08/01/2014.
"sand--2014-17272r"
"537184"
William R. Wampler; Samuel Maxwell Myers.
Funding Information
AC04-94AL85000
View MARC record | catkey: 23767308