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Back-side readout semiconductor photomultiplier [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2014.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.
Report Numbers
E 1.99:8,729,654
8,729,654
Subject(s)
Note
Published through SciTech Connect.
05/20/2014.
"8,729,654"
"13/652,238"
Choong, Woon-Seng; Holland, Stephen.
Funding Information
AC02-05CH11231
View MARC record | catkey: 23767398