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DEAL annual report [electronic resource].

Published
Washington, D.C. : United States. National Nuclear Security Administration, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
1 page : digital, PDF file
Additional Creators
Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The digital electronics at the atomic limit (DEAL) project seeks to leverage Sandia's atomic-precision fabrication capability to realize the theorized orders-of-magnitude improvement in operating voltage for tunnel field effect transistors (TFETs) compared to CMOS. Not only are low-power digital circuits a critical element of many national security systems (e.g. satellites), TFETs can perform circuit functions inaccessible to CMOS (e.g. polymorphism).
Report Numbers
E 1.99:sand2017--12366r
sand2017--12366r
Subject(s)
Note
Published through SciTech Connect.
11/01/2017.
"sand2017--12366r"
"658709"
Shashank Misra.
Funding Information
AC04-94AL85000
View MARC record | catkey: 23779260