Hybridization Gap in the Semiconducting Compound SrIr<sub>4</sub>In<sub>2</sub>Ge<sub>4</sub> [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 12,477-12,481 : digital, PDF file
- Additional Creators:
- Argonne National Laboratory
United States. Department of Energy. Office of Basic Energy Sciences
National Science Foundation (U.S.)
United States. Department of Energy. Office of Scientific and Technical Information
- Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E-g = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I (4) over bar 2m and unit cell parameters a = 6.9004(5) angstrom and c = 8.7120(9) angstrom. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semi-conducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.
- Published through SciTech Connect.
Inorganic Chemistry 55 23 ISSN 0020-1669 AM
Calta, Nicholas; Im, Jino; Fang, Lei; Chasapis, Thomas; Bugaris, Daniel; Chung, Duck; Kwok, Wai-Kwong; Kanatzidis, Mercouri.
- Funding Information:
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