Quantification of irradiation defects in beta-silicon carbide using Raman spectroscopy [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Science, 2016. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 58-62 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory, United States. Department of Energy. Office of Science, United States. Office of the Assistant Secretary for Nuclear Energy, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Raman spectra from polycrystalline beta-silicon carbide (SiC) were collected following neutron irradiation at 380–1180 °C to 0.011–1.87 displacement per atom. The longitudinal optical (LO) peak shifted to a lower frequency and broadened as a result of the irradiation. The changes observed in the LO phonon line shape and position in neutron-irradiated SiC are explained by a combination of changes in the lattice constant and Young's modulus, and the phonon confinement effect. The phonon confinement model reasonably estimates the defect-defect distance in the irradiated SiC, which is consistent with results from previous experimental studies and simulations.
- Published through SciTech Connect., 08/11/2016., "AT2030110", "AF5810000", "ERAT725", "NEAF278", Scripta Materialia 125 C ISSN 1359-6462 AM, and T. Koyanagi; M. J. Lance; Y. Katoh.
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