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Lithographic dry development using optical absorption [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 2013.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Additional Creators:
Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.
Report Numbers:
E 1.99:8,512,937
8,512,937
Subject(s):
Note:
Published through SciTech Connect.
08/20/2013.
"8,512,937"
"13/039,139"
Olynick, Deirdre; Schuck, P. James; Schmidt, Martin.
Funding Information:
AC02-05CH11231
View MARC record | catkey: 24046279