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Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy, 2005.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Additional Creators:
Oak Ridge Y-12 Plant, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.
Report Numbers:
E 1.99:6,849,882
6,849,882
Subject(s):
Note:
Published through SciTech Connect.
02/01/2005.
"6,849,882"
"10/102,272"
Chavarkar, Prashant; Smorchkova, Ioulia; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng.
Funding Information:
AC03-76SF00098
View MARC record | catkey: 24047701