Picosecond UV single photon detectors with lateral drift field [electronic resource] : Concept and technologies
- Washington, D.C. : United States. Dept. of Energy. High Energy Physics Division, 2015. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 100-108 : digital, PDF file
- Additional Creators:
- Fermi National Accelerator Laboratory, United States. Department of Energy. High Energy Physics Division, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Group III–V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III–V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the metal-oxide-semiconductor field-effect transistor development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting mode in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.
- Published through SciTech Connect., 09/01/2015., "arxiv:1409.4262", " fermilab-pub-14-602-ppd", "1316559", Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment 795 C ISSN 0168-9002 FT, and Yakimov, M.; Oktyabrsky, S.; Murat, P.
- Funding Information:
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