Actions for Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses [electronic resource].

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Postfabrication Phase Error Correction of Silicon Photonic Circuits by Single Femtosecond Laser Pulses [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 588-595 : digital, PDF file
Additional Creators
United States. Department of Energy, Natural Sciences and Engineering Research Council Canada, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Phase errors caused by fabrication variations in silicon photonic integrated circuits are an important problem, which negatively impacts device yield and performance. This study reports our recent progress in the development of a method for permanent, postfabrication phase error correction of silicon photonic circuits based on femtosecond laser irradiation. Using beam shaping technique, we achieve a 14-fold enhancement in the phase tuning resolution of the method with a Gaussian-shaped beam compared to a top-hat beam. The large improvement in the tuning resolution makes the femtosecond laser method potentially useful for very fine phase trimming of silicon photonic circuits. Finally, we also show that femtosecond laser pulses can directly modify silicon photonic devices through a SiO2 cladding layer, making it the only permanent post-fabrication method that can tune silicon photonic circuits protected by an oxide cladding.
Report Numbers
E 1.99:1353179
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Note
Published through SciTech Connect.
11/29/2016.
Journal of Lightwave Technology 35 4 ISSN 0733-8724 AM
Daniel Bachman; Zhijiang Chen; Christopher Wang; Robert Fedosejevs; Ying Y. Tsui; Vien Van.
Univ. of Alberta, Edmonton, AB (Canada)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Funding Information
AC02-76SF00515
View MARC record | catkey: 24049154