Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions [electronic resource].
- Washington, D.C. : United States. National Nuclear Security Administration, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 2,919-2,925 : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
- Report Numbers:
- E 1.99:sand--2015-8735j
- Other Subject(s):
- Published through SciTech Connect.
IEEE Transactions on Nuclear Science 62 6 ISSN 0018-9499 AM
Elizabeth C. Auden; Jose L. Pacheco; Edward Bielejec; Gyorgy Vizkelethy; John B. S. Abraham; Barney L. Doyle.
- Funding Information:
View MARC record | catkey: 24049364