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Sub-micron resolution of localized ion beam induced charge reduction in silicon detectors damaged by heavy ions [electronic resource].

Published:
Washington, D.C. : United States. National Nuclear Security Administration, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:
pages 2,919-2,925 : digital, PDF file
Additional Creators:
Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
In this study, displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si++ ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si++ ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
Report Numbers:
E 1.99:sand--2015-8735j
sand--2015-8735j
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
12/01/2015.
"sand--2015-8735j"
"615276"
IEEE Transactions on Nuclear Science 62 6 ISSN 0018-9499 AM
Elizabeth C. Auden; Jose L. Pacheco; Edward Bielejec; Gyorgy Vizkelethy; John B. S. Abraham; Barney L. Doyle.
Funding Information:
AC04-94AL85000
View MARC record | catkey: 24049364