Modeling of single event transients with dual double-exponential current sources [electronic resource] : Implications for logic cell characterization
- Washington, D.C. : United States. National Nuclear Security Administration, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 1,540-1,549 : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.
- Report Numbers:
- E 1.99:sand--2015-5187j
- Other Subject(s):
- Published through SciTech Connect.
IEEE Transactions on Nuclear Science 62 4 ISSN 0018-9499 AM
Dolores A. Black; William H. Robinson; Daniel B. Limbrick; Jeffrey D. Black; Ian Z. Wilcox.
- Funding Information:
View MARC record | catkey: 24049632