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Modeling of single event transients with dual double-exponential current sources [electronic resource] : Implications for logic cell characterization

Published:
Washington, D.C. : United States. National Nuclear Security Administration, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:
pages 1,540-1,549 : digital, PDF file
Additional Creators:
Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.
Report Numbers:
E 1.99:sand--2015-5187j
sand--2015-5187j
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Note:
Published through SciTech Connect.
08/07/2015.
"sand--2015-5187j"
"594593"
IEEE Transactions on Nuclear Science 62 4 ISSN 0018-9499 AM
Dolores A. Black; William H. Robinson; Daniel B. Limbrick; Jeffrey D. Black; Ian Z. Wilcox.
Funding Information:
AC04-94AL85000
View MARC record | catkey: 24049632