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Advanced far infrared detector and double donor studies in Ge [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 1994.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
95 pages : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy, National Aeronautics and Space Administration Announcement, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
This has application to astronomy and astrophysics. Selenium in Ge has been studied with a doping technique which limits complex formation. Only one ionization level has been found to correspond to selenium, which presumably occupies a substitutional site. This level is extremely unstable and its concentration decreases after annealing at 400C. Future work is planned to anneal the fast neutron damage before much selenium has formed in the {sup 74/76}Ge samples. It is expected that the observed selenium level can be better characterized and the missing selenium level is more likely to be discovered if other defects are removed before 77Se formation.
Report Numbers
E 1.99:lbl--36619
lbl--36619
Subject(s)
Dissertation Note
Thesis (M.S.); PBD: Dec 1994
Note
Published through SciTech Connect.
12/01/1994.
"lbl--36619"
"DE95011261"
": Contract W17605"
"Contract A59513CBVC"
Christopher Sean Olsen.
Funding Information
AC03-76SF00098
View MARC record | catkey: 24050373