Actions for Ohmic contacts on n-type β-Ga<sub>2<

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Ohmic contacts on n-type β-Ga<sub>2</sub>O<sub>3</sub> using AZO/Ti/Au [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Science, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 095,313 : digital, PDF file
Additional Creators
Oak Ridge National Laboratory, United States. Department of Energy. Office of Science, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.
Report Numbers
E 1.99:1394628
Subject(s)
Note
Published through SciTech Connect.
09/14/2017.
AIP Advances 7 9 ISSN 2158-3226 AM
Patrick H. Carey, IV; Jiancheng Yang; F. Ren; David C. Hays; S. J. Pearton; Soohwan Jang; Akito Kuramata; Ivan I. Kravchenko.
Funding Information
AC05-00OR22725
View MARC record | catkey: 24054716