Effect of gate voltage polarity on the ionic liquid gating behavior of NdNiO<sub>3</sub>/NdGaO<sub>3</sub> heterostructures [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: Article numbers 051,101 : digital, PDF file
Additional Creators:: Argonne National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, National Natural Science Foundation of China (NSFC), and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

The effect of gate voltage polarity on the behavior of NdNiO₃ epitaxial thin films during ionic liquid gating is studied using in situ synchrotron X-ray techniques. We show that while negative biases have no discernible effect on the structure or composition of the films, large positive gate voltages result in the injection of a large concentration of oxygen vacancies (similar to 3%) and pronounced lattice expansion (0.17%) in addition to a 1000-fold increase in sheet resistance at room temperature. Despite the creation of large defect densities, the heterostructures exhibit a largely reversible switching behavior when sufficient time is provided for the vacancies to migrate in and out of the thin film surface. The results confirm that electrostatic gating takes place at negative gate voltages for p-type complex oxides while positive voltages favor the electrochemical reduction of Ni³⁺. Switching between positive and negative gate voltages therefore involves a combination of electronic and ionic doping processes that may be utilized in future electrochemical transistors.

Report Numbers:

E 1.99:1374714

Subject(s):

Materials Science

Note:

Published through SciTech Connect.
05/16/2017.
"135308"
APL Materials 5 5 ISSN 2166-532X AM
Yongqi Dong; Haoran Xu; Zhenlin Luo; Hua Zhou; Dillon D. Fong; Wenbin Wu; Chen Gao.
National Key Basic Research Program of China
China Scholarship Council

Funding Information:

AC02-06CH11357

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