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Defect specific luminescence dead layers in CdS and CdSe [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 1,141-1,145 : digital, PDF file
Additional Creators
Argonne National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
CdS and CdSe are often used in optoelectronic devices whose effectiveness is may be dictated by defects in the near surface region. Luminescence is one of the main tools for studying such defects. The energy dependence of the x-ray excited optical luminescence (XEOL) spectra of these materials enables the extraction of the depth dependence of the defect distribution. Normal and time-gated XEOL spectra were obtained from these materials in the energy range 600 to 1500 eV. Here, we find that the results can best be understood in terms of a luminescence dead layer whose width depends on the position of the defect level in the band gap.
Report Numbers
E 1.99:1422776
Subject(s)
Note
Published through SciTech Connect.
04/28/2017.
"133928"
Canadian Journal of Chemistry 95 11 ISSN 0008-4042 AM
R. A. Rosenberg.
Funding Information
AC02-06CH11357
View MARC record | catkey: 24054981