Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description
- Article numbers 1,606,478 : digital, PDF file
- Additional Creators
- Oak Ridge National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. A key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]-/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. Furthermore, a reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V-1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. Our work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.
- Report Numbers
- E 1.99:1360067
- Subject(s)
- Note
- Published through SciTech Connect.
03/03/2017.
"KC0402010"
"ERKCSNX"
Advanced Materials 29 17 ISSN 0935-9648 AM
Shishun Zhao; Ziyao Zhou; Bin Peng; Mingmin Zhu; Mengmeng Feng; Qu Yang; Yuan Yan; Wei Ren; Zuo-Guang Ye; Yaohua Liu; Ming Liu. - Funding Information
- AC05-00OR22725
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