Actions for Sequential Infiltration Synthesis for the Design of Low Refractive Index Surface Coatings with Controllable Thickness [electronic resource].

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Sequential Infiltration Synthesis for the Design of Low Refractive Index Surface Coatings with Controllable Thickness [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 2,521-2,530 : digital, PDF file
Additional Creators
Argonne National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Control over refractive index and thickness of surface coatings is central to the design of low refraction films used in applications ranging from optical computing to antireflective coatings. Here, we introduce gas-phase sequential infiltration synthesis (SIS) as a robust, powerful and efficient approach to deposit conformal coatings with very low refractive indices. We demonstrate that the refractive indices of inorganic coatings can be efficiently tuned by the number of cycles used in the SIS process, composition and selective swelling of the of the polymer template. We show that the refractive index of Al2O3 can be lowered from 1.76 down to 1.1 using this method. The thickness of the Al2O3 coating can be efficiently controlled by the swelling of the block copolymer template in ethanol at elevated temperature, thereby enabling deposition of both single-layer and graded-index broadband anti-reflective coatings. Using this technique, Fresnel reflections of glass can be reduced to as low as 0.1% under normal illumination over a broad spectral range.
Report Numbers
E 1.99:1439858
Subject(s)
Note
Published through SciTech Connect.
01/31/2017.
"133502"
ACS Nano 11 3 ISSN 1936-0851 AM
Diana Berman; Supratik Guha; Byeongdu Lee; Jeffrey W. Elam; Seth B. Darling; Elena V. Shevchenko.
Funding Information
AC02-06CH11357
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