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Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Additional Creators
National Renewable Energy Laboratory (U.S.), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
Report Numbers
E 1.99:9,722,122
9,722,122
Subject(s)
Note
Published through SciTech Connect.
08/01/2017.
"9,722,122"
"14/725,592"
Angelo Mascarenhas.
Funding Information
AC36-08GO28308
View MARC record | catkey: 24055506