Local doping of two-dimensional materials [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Additional Creators:: Lawrence Berkeley National Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

Report Numbers:

E 1.99:9,449,851
9,449,851

Subject(s):

Materials Science

Note:

Published through SciTech Connect.
09/20/2016.
"9,449,851"
"14/833,407"
Dillon Wong; Jairo Velasco, Jr; Long Ju; Salman Kahn; Juwon Lee; Chad E. Germany; Alexander K. Zettl; Feng Wang; Michael F. Crommie.

Funding Information:

AC02-05CH11231

View MARC record | catkey: 24055570