Actions for Flux growth in a horizontal configuration [electronic resource] : An analog to vapor transport growth
Flux growth in a horizontal configuration [electronic resource] : An analog to vapor transport growth
- Published
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description
- Article numbers 023,402 : digital, PDF file
- Additional Creators
- Oak Ridge National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, United States. Air Force. Office of Scientific Research, and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Flux growth of single crystals is normally performed in a vertical configuration with an upright refractory container holding the flux melt. At high temperatures, flux dissolves the charge, forming a homogeneous solution before nucleation and growth of crystals takes place under proper supersaturation generated by cooling or evaporating the flux. In this paper, we report flux growth in a horizontal configuration with a temperature gradient along the horizontal axis: a liquid transport growth analogous to the vapor transport technique. In a typical liquid transport growth, the charge is kept at the hot end of the refractory container and the flux melt dissolves the charge and transfers it to the cold end. Once the concentration of charge is above the solubility limit at the cold end, the thermodynamically stable phase nucleates and grows. Compared to the vertical flux growth, the liquid transport growth can provide a large quantity of crystals in a single growth since the charge/flux ratio is not limited by the solubility limit at the growth temperature. This technique is complementary to the vertical flux growth and can be considered when a large amount of crystals is needed but the yield from the conventional vertical flux growth is limited. Finally, we applied this technique to the growth of IrSb3, Mo3Sb7, and MnBi from self-flux, and the growth of FeSe, CrTe3, NiPSe3, FePSe3, CuInP2S6, RuCl3, and OsCl4 from a halide flux.
- Report Numbers
- E 1.99:1376471
- Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
07/05/2017.
"74837"
Physical Review Materials 1 2 ISSN 2475-9953 AM
J. -Q. Yan; B. C. Sales; M. A. Susner; M. A. McGuire.
National Research Council (United States) - Funding Information
- AC05-00OR22725
14RQ08COR
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