Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe<sub>2</sub> [electronic resource] : Enabling nanoscale direct write homo-junctions
- Published:
- Washington, D.C. : United States. Dept. of Energy. Office of Science, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description:
- Article numbers 27,276 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory, United States. Department of Energy. Office of Science, and United States. Department of Energy. Office of Scientific and Technical Information
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- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe2 thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.
- Report Numbers:
- E 1.99:1261537
- Subject(s):
- Note:
- Published through SciTech Connect.
06/06/2016.
"KC0202020"
"ERKCS80"
Scientific Reports 6 6 ISSN 2045-2322 AM
Michael Stanford; Joo Hyon Noh; Michael R. Koehler; David G. Mandrus; Gerd Duscher; Adam Justin Rondinone; Ilia N. Ivanov; Thomas Zac Ward; Philip D. Rack; Pushpa Raj Pudasaini; Alex Belianinov; Nicholas Cross. - Funding Information:
- AC05-00OR22725
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