Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy. Office of Science, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: pages 136-139 : digital, PDF file
Additional Creators:: Oak Ridge National Laboratory, United States. Department of Energy. Office of Science, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

Report Numbers:

E 1.99:1362248

Subject(s):

Materials Science

Note:

Published through SciTech Connect.
04/22/2016.
"KC0201010"
"ERKCS89"
Applied Surface Science 395 ISSN 0169-4332 AM
N. Fernandez-Delgado; M. Herrera; M. F. Chisholm; M. A. Kamarudin; Q. D. Zhuang; M. Hayne; S. I. Molina.

Funding Information:

AC05-00OR22725

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