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Persistent photoconductivity in two-dimensional Mo<sub>1-x</sub>W <sub>x</sub>Se<sub>2</sub>–MoSe<sub>2</sub> van der Waals heterojunctions [electronic resource].

Published:
Washington, D.C. : United States. Dept. of Energy. Office of Science, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:
pages 923-930 : digital, PDF file
Additional Creators:
Oak Ridge National Laboratory, United States. Department of Energy. Office of Science, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary:
Van der Waals (vdW) heterojunctions consisting of vertically-stacked individual or multiple layers of two-dimensional (2D) layered semiconductors, especially the transition metal dichalcogenides (TMDs), are fascinating new artificial solids just nanometers-thin that promise novel optoelectronic functionalities due to the sensitivity of their electronic and optical properties to strong quantum confinement and interfacial interactions. Here, monolayers of n-type MoSe2 and p-type Mo1-xW xSe2–MoSe2 are grown by vapor transport methods, then transferred and stamped to form artificial vdW heterostructures with different interlayer orientations. Atomic-resolution Z-contrast electron microscopy and electron diffraction are used to characterize both the individual monolayers and the atomic registry between layers in the bilayer vdW heterostructures. These measurements are compared with photoluminescence and low-frequency Raman spectroscopy, which indicates strong interlayer coupling in heterostructures. Remarkably, the heterojunctions exhibit an unprecedented photoconductivity effect that persists at room temperature for several days. This persistent photoconductivity is shown to be tunable by applying a gate bias that equilibrates the charge distribution. Furthermore, these measurements indicate that such ultrathin vdW heterojunctions can function as rewritable optoelectronic switches or memory elements under time-dependent photo-illumination, an effect which appears promising for new monolayer TMDs-based optoelectronic devices applications.
Report Numbers:
E 1.99:1247942
Subject(s):
Note:
Published through SciTech Connect.
02/16/2016.
"KC0403040"
"ERKCZ01"
Journal of Materials Research 31 07 ISSN 0884-2914 AM
Alexander A. Puretzky; Leonardo Basile; Juan Carlos Idrobo; Christopher M. Rouleau; David B. Geohegan; Kai Xiao; Xufan Li; Ming -Wei Lin; Kei Wang.
Funding Information:
AC05-00OR22725
View MARC record | catkey: 24056187