Direct growth of single-crystalline III–V semiconductors on amorphous substrates [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2016. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 10,502 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO<sub>2</sub> growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.
- Published through SciTech Connect., 01/27/2016., "ncomms10502", Nature Communications 7 ISSN 2041-1723 AM, and Kevin Chen; Rehan Kapadia; Audrey Harker; Sujay Desai; Jeong Seuk Kang; Steven Chuang; Mahmut Tosun; Carolin M. Sutter-Fella; Michael Tsang; Yuping Zeng; Daisuke Kiriya; Jubin Hazra; Surabhi Rao Madhvapathy; Mark Hettick; Yu-Ze Chen; James Mastandrea; Matin Amani; Stefano Cabrini; Yu-Lun Chueh; Joel W. Ager III; Daryl C. Chrzan; Ali Javey.
- Funding Information:
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