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Three-dimensional crossbar arrays of self-rectifying Si/SiO<sub>2</sub>/Si memristors [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 15,666 (2,017) : digital, PDF file
Additional Creators
Brookhaven National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibits repeatable resistance switching behavior with high rectifying ratio (105), high ON/OFF conductance ratio (104) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.
Report Numbers
E 1.99:bnl--204647-2018-jaam
bnl--204647-2018-jaam
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Note
Published through SciTech Connect.
06/05/2017.
"bnl--204647-2018-jaam"
Nature Communications 8 ISSN 2041-1723 AM
Can Li; Lili Han; Hao Jiang; Moon -Hyung Jang; Peng Lin; Qing Wu; Mark Barnell; J. Joshua Yang; Huolin L. Xin; Qiangfei Xia.
Funding Information
SC0012704
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