Scalable sub-micron patterning of organic materials toward high density soft electronics [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 14,520 : digital, PDF file
- Additional Creators:
- Brookhaven National Laboratory
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.
- Published through SciTech Connect.
Scientific Reports 5 ISSN 2045-2322 AM
Jaekyun Kim; Myung -Gil Kim; Jaehyun Kim; Sangho Jo; Jingu Kang; Jeong -Wan Jo; Woobin Lee; Chahwan Hwang; Juhyuk Moon; Lin Yang; Yun -Hi Kim; Yong -Young Noh; Jae Yun Jaung; Yong -Hoon Kim; Sung Kyu Park.
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