Enhancement of surface area and wettability properties of boron doped diamond by femtosecond laser-induced periodic surface structuring [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description
- pages 3,389-3,396 : digital, PDF file
- Additional Creators
- SLAC National Accelerator Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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- Free-to-read Unrestricted online access
- Summary
- We demonstrate the formation of laser-induced periodic surface structures (LIPSS) in boron-doped diamond (BDD) by irradiation with femtosecond near-IR laser pulses. The results show that the obtained LIPSS are perpendicular to the laser polarization, and the ripple periodicity is on the order of half of the irradiation wavelength. The surface structures and their electrochemical properties were characterized using Raman micro-spectroscopy, in combination with scanning electron and atomic force microscopies. The textured BDD surface showed a dense and large surface area with no change in its structural characteristics. The effective surface area of the textured BDD electrode was approximately 50% larger than that of a planar substrate, while wetting tests showed that the irradiated area becomes highly hydrophilic. Lastly, our results indicate that LIPSS texturing of BDD is a straightforward and simple technique for enhancing the surface area and wettability properties of the BDD electrodes, which could enable higher current efficiency and lower energy consumption in the electrochemical oxidation of toxic organics.
- Report Numbers
- E 1.99:1394085
- Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
08/28/2017.
Optical Materials Express 7 9 ISSN 2159-3930 AM
Eduardo Granados; Miguel Martinez Calderon; Jacek Krzywinski; Eckhard Worner; Ainara Rodriguez; Mikel Gomez Aranzadi; Santiago M. Olaizola. - Funding Information
- AC02-76SF00515
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