Dynamic Recrystallization Model for Whisker and Hillock Growth [electronic resource].

Published:: Washington, D.C. : United States. National Nuclear Security Administration, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: 30 pages : digital, PDF file
Additional Creators:: Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Tin (Sn) whiskers are not a recent development. Studies in the late 1930’s investigated thin filaments that grew spontaneously from Sn coatings used for the corrosion protection of electronic hardware. It was soon recognized that these Sn filaments,or whiskers, could create short circuits in the same electronic equipment. Figure 1a illustrates whisker growth in the hole of a printed circuit board having an immersion Sn surface finish. The engineering solution was to contaminate the Sn with > 3wt.% of lead (Pb). The result was that whisker growth was replaced with hillock formation (Fig. 1b) that posed a minimal reliability concernto electrical circuits. Today, Pb-containing finishes are being replaced with pure Sn coatings to meet environmental restrictions on Pb use. The same short-circuit concerns have been raised, once again, with respect to Sn whiskers. The present authors have taken the approach that, in order to develop more widely applicable, first-principles strategies to mitigate Sn whisker formation, it is necessary to understand the fundamental mechanism(s) and rate kinetics underlying their development. Numerous mechanisms have been proposed by other authors to describe whisker growth, including static recrystallization by Boguslavsky and Bush.

Report Numbers:

E 1.99:sand--2015-6236j
sand--2015-6236j

Subject(s):

Materials Science

Note:

Published through SciTech Connect.
07/01/2015.
"sand--2015-6236j"
"606308"
Annual Physics Review
Paul T. Vianco; Michael K. Neilsen.

Funding Information:

AC04-94AL85000

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