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MoS<sub>2</sub> Heterojunctions by Thickness Modulation [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 10,990 : digital, PDF file
Additional Creators
Lawrence Berkeley National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
In this work, we report lateral heterojunction formation in as-exfoliated MoS2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. Finally, the work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS2 junctions with important implications for exploring novel optoelectronic devices.
Report Numbers
E 1.99:1256052
Subject(s)
Note
Published through SciTech Connect.
06/30/2015.
"srep10990"
Scientific Reports 5 ISSN 2045-2322 AM
Mahmut Tosun; Deyi Fu; Sujay B. Desai; Changhyun Ko; Jeong Seuk Kang; Der-Hsien Lien; Mohammad Najmzadeh; Sefaattin Tongay; Junqiao Wu; Ali Javey.
Funding Information
AC02-05CH11231
View MARC record | catkey: 24057139